THE EFFECT OF N2 FLOW RATE TO PROPERTY OF (Cr-Al-Nb-Si-V)N FILM BY SPUTTERING TECHNIQUE

Abstract

This research aims to study the chemical and physical properties of (Cr-Al-Nb-Si-V)N films deposited with varying nitrogen gas flow rates ranging from 0 to 5 sccm using the sputtering method. The results of the study indicate that the nitrogen gas flow rate significantly affects the film's morphology and crystal structure. At 0 sccm nitrogen gas flow rate, the film's morphology appears smooth surface and the crystal structure exhibits an amorphous. However, when the nitrogen gas flow rate is increased to 1-5 sccm, the film surface shows distinct grains with sizes ranging from 16.6±2.9 to 42.0±5.1 nanometers, respectively. At a nitrogen gas flow rate of 5 sccm, the crystal structure exhibits a polycrystalline. All films showed the element composition with Cr as the predominant element. The hardness and modulus properties are also notably influenced by the change in nitrogen gas flow rates. At nitrogen gas flow rates between 0 and 3 sccm, the films exhibit average hardness values ranging from 10.4±0.8 to 11.8±0.4 GPa and average modulus values ranging from 145.7±13.7 to 157.3±5.8 GPa. These values are lower than those of the films deposited at a nitrogen gas flow rate of 5 sccm, where the average hardness is 14.7±0.8 GPa and the average modulus is 181.1±4.2 GPa. This demonstrates that when the crystal structure of film was changed from amorphous to polycrystalline, the hardness and modulus values increase.