Fabrication of CuInSe2 Single Crystals from Melt Growth by Directional Freezing Method
Article Sidebar
Main Article Content
Abstract
Single crystals of the semiconducting compound CuInSe2 prepared from the melt by directional freezing method using the horizontal Bridgeman-Stockbarger traveling furnace and the temperature gradient freezing 45 degree tilt-furnace techniques. The experimental details and crystal morphology of the as-grown ingots obtained by both techniques were reported. X-ray powder diffraction patterns of the crushed crystals were carried out to determine the lattice parameters. The energy gap being 1.03 eV was evaluated, at room temperature, from the optical transmission spectrum. The conductivity types of the samples were either p-type or n-type with low resistivity values in the range 1.4 – 6.1 Ω-cm. The change in the electrical resistivity values of CuInSe2 was investigated by annealing at 100 – 600 °C in vacuum and in a slowly flow of pure nitrogen gas. At annealing temperature lower than 500 °C, the resistivity values of all samples were slightly changed. However, at annealing temperature higher than 500 °C, the p-type samples were changed to n-types ones except the n-type samples which remained the same conductivity type with slightly lower resistivity values.
Keywords: CuInSe2, directional freezing method, electrical resistivity
Corresponding author: E-mail: cast@kmitl.ac.th
Article Details
Copyright Agreement Statement
The corresponding author has to submit Copyright Agreement form after the article is accepted for publication in order to warrant that this contribution is original and that he/she has full power to make this grant. The author signs for and accepts responsibility for releasing this material on behalf of any and all co-authors.
The author(s) grant Current Applied Science and Technology a non-exclusive, irrevocable, royalty-free license to publish, reproduce, distribute, and archive the article in print and electronic form with effect if and when the article is accepted for publication. In the event that the article is withdrawn prior to acceptance or is declined, this agreement shall have no effect, and no party shall be bound by it.
The author(s) retain copyright of this article, including but not limited to the right to reproduce and distribute the article, to include it in a thesis or book, and to post it on an institutional or personal repository, provided that the original publication in Current Applied Science and Technology is properly cited.
References
[2] T. Datta, R. Noufi, and S.K. Deb “Electrical conductivity of p-type CuInSe2 Thin Films” Appl. Lett., 47(10): 1102-1104, November, 1985.
[3] L.L. Kazmerski, F.R. White, and G.K. Morgan, “Thin Films CuInSe2 /CdS Heterojunction Solar Cells” Appl. Phys. Lett., 29(2): 268-270, March, 1976.
[4] S. Chatraporn, K. Yoodee, P. Songpong and C. Jityuthakarn, “The CuInSe2 Based Solar Cell Program at Semiconductor Physics Research Laboratory (SPRL)” Proceeding 2nd Japan-Thailand Joint Seminar on Protovoltaics : 32-36, 1996.
[5] R.D. Tomlinson, “Fabrication of CuInSe2 Single Crystals Using Melt Growth Techniques”, Solar Cell, 16:17-26, January/February, 1986.
[6] L. Haworth, R.D. Tomlinson, and I.S. Al-Saffar, “Growth and Characterization of CuInSe2 Single Crystals” Jap. J. Appl. Phys. 19 (supl. 19-3): 77-80, 1980.
[7] W.W.Lam, and I. Shih “Crystal Growth of CuGaxIn1-x Se2 by Horizontal Bridgman Method”, Solar Energy Materials and Solar Cells, 50: 111-117, 1998.
[8] C.H. Champness and G.I. Ahmad, “Annealing of Monocrystalline CuInSe2 Samples”, Thin Solid Films, 361-362: 482-487, 2000.
[9] I. Shih, C.H. Champness, and A.V. Shahidi, “Growth by Directional Freezing of CuInSe2 and Diffused Homojunctions in Bulk Material” Solar Cells, 16: 2741, January/February 1986, pp. 7-41.
[10] S.M. Wasim, “transport Properties of CuInSe2” Solar Cells, 16: 289-316, January/February, 1986.
