Observation of Stark Shift of ErP/InP Single Quantum Well by Erbium Delta-Doping on InP

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Published: Mar 30, 2018
Keywords:
quantum well devices

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W. Pecharapa
Quantum and Optical Semiconductor Laboratory, Department of Applied Physics, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand.
J. Nukeaw
Quantum and Optical Semiconductor Laboratory, Department of Applied Physics, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand.

Abstract

A Stark shift due to external applied electric field of ErP/InP single quantum well caused by Erbium delta-doping technique on InP was firstly observed using photocurrent spectroscopy (PC). PC spectra clearly exhibited the interband transition energies of the well on a doped sample. When applying external biased voltage, Its spectra showed significant Stark shift with increasing voltage.


Keywords:  quantum well devices


Corresponding author: E-mail: cast@kmitl.ac.th

Article Details

Issue
Vol. 1 No. 1 (2001)
Section
Original Research Articles

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References

[1] Y. Takada, K. Fujita, M. Matsubara, N. Yamada, S. Ichiki, M. Tabuchi and Y. Fujiwara, J. Appl. Phys. 82(2), pp. 635-638, (1997).
[2] K. Fujita, J. Tsuchiya, S. Ichiki, H. Hamamatsu, N. matsumoto, M. Tabushi, Y. Fujiwara, and Y. Takeda, Appl. Suf. Sci., 117/118, pp. 758-789, (1997).
[3] A.G. Petukhov, W.R.L. Lambrecht, and B. Segall, Phys.Rev.B, 53, 4324 (1996).
[4] J. Nukeaw, J. Yanagisawa, N. Matsubara, Y. Fujiwara, and Y. Takeda, Appl. Phys. Lett., 70, 84 (1997).
[5] V.L. Alperovich, A.S. Jaroshevich, H.E. Scheibler, and A.S. Terekhov, Solid-State Electronics, Vol. 37, pp. 657-660, (1994).
[6] Y. Fujiwara, A. Matsubara, J. Tsuchiya, T. Ito and Y. Takeda, Jpn. J. Appl. Phys. Vol.36, Part 1, No. 5A, pp. 2587-2591, (1997).
[7] T.W. Kim, D.U. Lee, D.C. Choo, J.H. Kim, M.D. Kim, H.D. Jeong, K.H. Yoo, J.Y. Kim and H.J. Lim., Jpn. J. Appl. Phys. Vol.40, Part 1, No. 5A, pp. 3120-3123, (2001).
[8] H. Kobayashi, Y. Kawamura and H. Hidetoshi, Jpn. J. Appl. Phys. Vol. 33, Part 1, No. 1B, pp. 887-889, (1994).
[9] J. Singh, Physics of Semiconductors and Their Heterostructures (McGraw-Hill, Inc, Singapore, 1993).
[10] K.K.Ng, Complete Guide to Semiconductor Devices, (McGraw-Hill, Inc, New York, 1995).
[11] W. Peachrapa and J. Nukeaw, Proceeding of the Thai Physics in the next century, pp.52-59, Dec 22-23, 2000.