Observation of Stark Shift of ErP/InP Single Quantum Well by Erbium Delta-Doping on InP

Main Article Content

W. Pecharapa
J. Nukeaw

Abstract

A Stark shift due to external applied electric field of ErP/InP single quantum well caused by Erbium delta-doping technique on InP was firstly observed using photocurrent spectroscopy (PC). PC spectra clearly exhibited the interband transition energies of the well on a doped sample. When applying external biased voltage, Its spectra showed significant Stark shift with increasing voltage.


Keywords:  quantum well devices


Corresponding author: E-mail: cast@kmitl.ac.th

Article Details

Section
Original Research Articles

References

[1] Y. Takada, K. Fujita, M. Matsubara, N. Yamada, S. Ichiki, M. Tabuchi and Y. Fujiwara, J. Appl. Phys. 82(2), pp. 635-638, (1997).
[2] K. Fujita, J. Tsuchiya, S. Ichiki, H. Hamamatsu, N. matsumoto, M. Tabushi, Y. Fujiwara, and Y. Takeda, Appl. Suf. Sci., 117/118, pp. 758-789, (1997).
[3] A.G. Petukhov, W.R.L. Lambrecht, and B. Segall, Phys.Rev.B, 53, 4324 (1996).
[4] J. Nukeaw, J. Yanagisawa, N. Matsubara, Y. Fujiwara, and Y. Takeda, Appl. Phys. Lett., 70, 84 (1997).
[5] V.L. Alperovich, A.S. Jaroshevich, H.E. Scheibler, and A.S. Terekhov, Solid-State Electronics, Vol. 37, pp. 657-660, (1994).
[6] Y. Fujiwara, A. Matsubara, J. Tsuchiya, T. Ito and Y. Takeda, Jpn. J. Appl. Phys. Vol.36, Part 1, No. 5A, pp. 2587-2591, (1997).
[7] T.W. Kim, D.U. Lee, D.C. Choo, J.H. Kim, M.D. Kim, H.D. Jeong, K.H. Yoo, J.Y. Kim and H.J. Lim., Jpn. J. Appl. Phys. Vol.40, Part 1, No. 5A, pp. 3120-3123, (2001).
[8] H. Kobayashi, Y. Kawamura and H. Hidetoshi, Jpn. J. Appl. Phys. Vol. 33, Part 1, No. 1B, pp. 887-889, (1994).
[9] J. Singh, Physics of Semiconductors and Their Heterostructures (McGraw-Hill, Inc, Singapore, 1993).
[10] K.K.Ng, Complete Guide to Semiconductor Devices, (McGraw-Hill, Inc, New York, 1995).
[11] W. Peachrapa and J. Nukeaw, Proceeding of the Thai Physics in the next century, pp.52-59, Dec 22-23, 2000.