Al0.3 Ga0.7 As/GaAs Single Quantum Well Transition Energy Calculation

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Published: Nov 12, 2018
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Wicharn Techitdheera
Computational Physics Research Laboratory, Applied Physics Department, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand
Pitiporn Thanomngam
Computational Physics Research Laboratory, Applied Physics Department, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand
Wisanu Pecharapa
Quantum and Optical Semiconductor Research Laboratory, Applied Physics Department, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand
Jiti Nukaew
Quantum and Optical Semiconductor Research Laboratory, Applied Physics Department, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand

Abstract

The calculation results of e l –hh l transition energies of Al0.3 Ga0.7 As/GaAs single quantum well as various temperatures range from 15 K to 120 K have been improved in this work. Good agreement compared with luminescence data has been obtained when some parameters like effective masses of electron and hole, band offsets were changed.


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Corresponding author: E-mail : cast@kmitl.ac.th

Article Details

Issue
Vol. 5 No. 1 (2005)
Section
Original Research Articles

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References

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