Al0.3 Ga0.7 As/GaAs Single Quantum Well Transition Energy Calculation

Article Sidebar

PDF
Published: Nov 12, 2018
Keywords:
-

Main Article Content

Wicharn Techitdheera
Computational Physics Research Laboratory, Applied Physics Department, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand
Pitiporn Thanomngam
Computational Physics Research Laboratory, Applied Physics Department, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand
Wisanu Pecharapa
Quantum and Optical Semiconductor Research Laboratory, Applied Physics Department, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand
Jiti Nukaew
Quantum and Optical Semiconductor Research Laboratory, Applied Physics Department, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand

Abstract

The calculation results of e l –hh l transition energies of Al0.3 Ga0.7 As/GaAs single quantum well as various temperatures range from 15 K to 120 K have been improved in this work. Good agreement compared with luminescence data has been obtained when some parameters like effective masses of electron and hole, band offsets were changed.


Keywords:  -


Corresponding author: E-mail : cast@kmitl.ac.th

Article Details

How to Cite
Techitdheera, W., Thanomngam, P., Pecharapa, W., & Nukaew, J. (2018). Al0.3 Ga0.7 As/GaAs Single Quantum Well Transition Energy Calculation. CURRENT APPLIED SCIENCE AND TECHNOLOGY, 5(1), 445–449. retrieved from https://li01.tci-thaijo.org/index.php/cast/article/view/162499
Issue
Vol. 5 No. 1 (2005)
Section
Original Research Articles

Copyright Agreement Statement

The corresponding author has to submit Copyright Agreement form after the article is accepted for publication in order to warrant that this contribution is original and that he/she has full power to make this grant. The author signs for and accepts responsibility for releasing this material on behalf of any and all co-authors.

 

The author(s) grant Current Applied Science and Technology a non-exclusive, irrevocable, royalty-free license to publish, reproduce, distribute, and archive the article in print and electronic form with effect if and when the article is accepted for publication. In the event that the article is withdrawn prior to acceptance or is declined, this agreement shall have no effect, and no party shall be bound by it.

 

The author(s) retain copyright of this article, including but not limited to the right to reproduce and distribute the article, to include it in a thesis or book, and to post it on an institutional or personal repository, provided that the original publication in Current Applied Science and Technology is properly cited.

 

 

 

References

[1] Wisanu Pecharapa, Pongladda Panyajirawut, and Prasert Kraisingdecha “Study of Al0.3 Ga0.7 As/GaAs Single Quantum Well Grown by Molecular Beam Epitaxy,” private communication.
[2] A. B. Dzyubenko, Intraband transitions in magnetoexitons in coupled double quantum wells, J. of Experimental and Theoretical Physics, 86(4), 1998, pp. 790-797.
[3] Kyu-Seok Lee, Won-Seok Han, Jeong Soo Kim, Bun Lee, “Band structure Parameters of Compressively Strained In0.65 Ga0.35 As/InGaAsP Multiple Quantum Wells,” J. of Korean Physical Society, 37(5), 2000, pp. 587-592.
[4] V. I. Zubkov et al, “Determination of band offsets in strained InxGa1-x As/GaAs Quantum Wells by Capacitance-Voltage Profiling and Schrodinger-Poisson Self-Consistent Simulation”, Phys. Review B, 70, 2004.
[5] Jasprit Singh, Semiconductor Devices: An Introduction, McGraw-Hill, Singapore, 1994.
[6] N. Ashkenasy et al, “Surface Photovoltage Spectroscopy of an InGaAs/GaAs/AlGaAs Single Quantum Well Laser Structure”, J. Appl. Phys,. 83(2), 1998.
[7] S.C. Jain, M. Willander and H. Maes, “Stresses and Strains in Epilayers, Stripes and Quantum Structures of III-V Compound Semiconductors”, Semicond. Sci Technol., 11, 1996.