Electrical Properties of Semiconducting Copper Zinc Sulphide Thin Films
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Abstract
The electrical properties of metal-organic-chemical-vapour-deposited copper zinc sulphide (Cu-Zn-S) thin films on soda-lime substrates were studied. The films produced were characterized in terms of their electrical properties employing the Four-point probe procedure at a temperature range of 370 to 470oC. The electrical properties (resistivity and conductivity) of the deposited copper zinc sulphide films were systematically studied in terms of the deposition parameters of concentration and deposition temperature. The conductivity was in the interval of 5.48 to 8.0 × 10-1 (Ω.cm)-1. Activation energies of 0.54 and 0.29 eV in the deposition temperature range were estimated. The high resistive property of the films re-emphasized the potential use of these materials as active semiconductors for optoelectronic device applications.
Keywords: copper zinc sulphide; electrical conductivity; thin films; thickness; four-point probes
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