Behavior of Ta2O5-Si Capacitors with Different Gate Electrode under Constant Current Stress
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gate electrode dielectric properties oxides consatnt current stress
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Abstract
The electrical characteristics of MOS capacitors with Ta2O5 as oxide and with different gate electrodes(Al, Au, W, TiN) are investigated using high frequency capacitance-voltage (C-V) and current–voltage (I-V)measurements. The influence of deposition techniques of gate electrode (reactive sputtering and evaporation)and the type of electrode material (different work functions) are observed. Charged trapping properties werestudied by measuring the gate voltage shift due to trapped charge generation in order to investigate theresponse to constant current stress (CCS) under various current/time conditions at room temperature. Theresults showed that the presence of pre-existing electron traps leads the changes of time dependent voltageduring gate injected CCS in the initial stage, followed by the slow positive charge build-up, same for all thestructures and characteristic for this oxide. Gate-induced defects due to ther rate of reaction of gate electrodewith the oxide are responsible for different behavior of the structures with different gate electrodes, observedin the initial stage of CCS. The Au-gated devices appear to be the most susceptible to the constant currentstress degradation. They also have highest values of capacitance and lowest leakage currents.
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Pecovska-Gjorgjevich, M., Velevska, J., & Atanassova, E. (2013). Behavior of Ta2O5-Si Capacitors with Different Gate Electrode under Constant Current Stress. Science, Engineering and Health Studies, 6(2), 37–48. https://doi.org/10.14456/sustj.2012.8
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Research Articles
References
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Pecovska-Gjorgjevich, M., Spassov, D., Novkovski, N., and Atanasova, E. (2005). Dielectric characteristics and reliability tests for thin Au-Ta2O5-SiO2-Si structures. Romanian Journal of Physics, 50: 1009-1017.
Rhoderick, E. H. (1980). Metal-Semiconductor Contacts. In Monograph in Electrical and Electronic Engineering (Hammand, P. and Walsh, D., eds.), p.10. Oxford University Press, New York.
Spassov, D., Atanassova, E., and Virovska, D. (2006). Electrical characteristics of Ta2O5 based capacitors with different gate electrodes. Applied Physics A: Materials Science & Processing, 82: 55-62.
Sze, S. M. (2001). Physics of Semiconductor Devices, John Wiley & Sons, New York.
Swartz, S. L. (1990). Topics in electronic ceramics. IEEE Transactions on Electrical Insulation, 25: 935-987.
Vehkamaki, M., Hanninen, T., Ritala, M., Leskela, M., Sajavaara, T., Rauhala, E., and Keinonen, J. (2001). Atomic layer deposition of SrTiO3 thin films from a novel strontium precursor - strontiumbis(tri-isopropylcyclopentadienyl). Chemical Vapor Deposition, 7: 75-80.
Wilk, G. D., Wallace, R. M., and Anthony, J. M. (2001). High-κ gate dielectrics: Current status and materials properties considerations. Journal of Applied Physics, 89(10): 5243-5276.
Wyon, C. (2002). Future technology for advanced MOS devices. Nuclear Instrumentation and Methods in Physical Research B, 186: 380-391.
Atanassova, E. and Paskaleva, A. (2007). Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs. Microelectronics Reliability, 47 (6): 913-923.
Atanassova, E. and Spassov, D. (2000). Thin Ta2O5 Films on Si by XPS. Surface Science Spectra, 7: 143.
Atanassova, E., Spassov, D., Paskaleva, A., Koprinarova, J., and Georgieva, M. (2002). Influence of oxidation temperature on the microstructure and electrical properties of Ta2O5 on Si. Microelectronics Journal, 33: 907-920.
Atanassova, E. and Spassov, D. (1999). Hydrogen annealing effects on the properties of thermal Ta2O5 on Si. Microelectronics Journal, 30: 265-274.
Atanassova, E., Dimitrova, T., and Koprinarova, J. (1995). AES and XPS study of thin RF-sputtered Ta2O5 layers. Applied Surface Science, 84: 193-202.
Atanassova, E., Paskaleva, A., and Novkovski, N. (2008). Effects of the metal gate on the stress-indusced traps in Ta2O5/SiO2 stacks. Microelectronics Reliability, 48: 514-525.
Atanassova, E., Stojadinovic, N., Paskaleva, A., Spassov, D., Vracar, L., and Georgieva, M. (2008). Constant voltage stress induced current in Ta2O5 stacks and its dependence on a gate electrode. Semiconductor Science Technologies, 23: 075017.
Brown, G. A. (2004). Scaling CMOS Materials & devices. Materials Today, 7(1): 20-25.
Di Maria, D. J., Cartier, E., and Arnold, D. (1993). Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon. Journal of Applied Physics, 73: 3367-3384.
Dimitrova, T., Arshak, K., and Atanassova, E. (2001). Crystallization effects in oxygen annealed Ta2O5 thin films on Si, Thin Solid Films, 381: 31-38.
Gilmer, D., Hobbs, C., Hegde, R., La, L., Adetutu, O., Conner, J., Tiner, M., Prabhu, L., Bagchi, S., and Tobin, P. (2000). Investigation of titanium nitride gates for tantalum pentoxide and titanium dioxide dielectrics. Journal of Vacancy Science and Technology A, 18, 1158.
Groner, M. D. and George, S. M. (2003). High-k dielectrics grown by atomic layer deposition: Capacitor and gate applications. In Interlayer Dielectrics for Semiconductor Technologies, (Murarka, I., Eizenberg, S. P., and Sinha, A. K., eds.), pp. 327-348. Academic Press, San Diego.
International Technology Roadmap for Semiconductors (ITRS), [Online URL: www.https://public.itrs.net].
Jiang, P. C. and Chen, J. S. (2004). Effects of Post-Metal Annealing on Electrical Characteristics and Thermal Stability of W2N/Ta2O5/Si MOS Capacitors. Journal of The Electrochemical Society, 151(11): 751-755.
Kingon, A., Maria, J., and Streiffer, S. (2000). Alternative dielectrics to silicon dioxide for memory and logic devices. Nature, 406: 1032-1038.
Lai, Y., Chen, K., and Chena, J. S. (2002). Investigation of the interlayer characteristics of Ta2O5 thin films deposited on bare, N2O, and NH3 plasma nitridated Si substrates. Journal of Applied Physics, 91(10): 6428-6434.
Lee, B. H., Choi, R., Kang, L., Gopalan, S., Nieh, R., Onishi, K., Jeon, Y., Qi, W.- J., Kang, C., and Lee, J. C. (2000). Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition. Tech. Dig. - International Electron Devices Meeting, 39.
Lee, J. W., Han., C. H., Park, J. S., and Park, J. W. (2001). Dry etching of ZnO thin film by Inductively Coupled plasma. Journal of Electrochemical Society, 148: 95.
Nalwa, H. S., Ed. (1999). Handbook of Low and High Dielectric Constant Materials and Their Applications, Volume 1: Materials and Processing. Academic Press, San Diego.
Nandi, S. K., Chatterjee, S., Samanta, S. K., Dalapati, G. K., Bose, P. K., Varma, S., Patil, S., and Maiti, C. K. (2003). Electrical properties of Ta2O5 films deposited on ZnO. Bulletin of Materials Sciences, 26(4): 365-369.
Nishioka, Y., Kimura, S’i., Shinriki, H., and Mukai, K. (1987). NMR spectrum of 4 contained six resonances for the epoxy carbon. Journal of Electrochemical Society, 134: 410.
Novkovski, N., Pecovska-Gjorgjevich, M., Atanassova, E., and Dimitrova, T. (1999). Stress degradation of low field leakage in aluminium gate MOS structures containing RF magnetron sputtered thin Ta2O5 films on silicon. Physica Status Solidi (a), 172: R9-R10.
Novkovski, N. and Atanassova, E. (2005) Wearout and breakdown of RF Sputtered Ta2O5 Films on Silicon. Applied Physics A, 81(6): 1191-1195.
Pecovska-Gjorgjevich, M., Novkovski, N., and Atanassova, E. (2003). Stress induced leakage currents in thin Ta2O5 films. Microelectronics Reliability 47: 235-241.
Pecovska-Gjorgjevich, M., Novkovski, N., Atanasova, E., and Spassov, D. (2004). The effect of gate material on dielectric characteristics and conduction of Ta2O5 MOS structures. Proceedings of the 2004 IEEE International Conference on Solid Dielectrics ICSD: 872-875.
Pecovska-Gjorgjevich, M., Spassov, D., Novkovski, N., and Atanasova, E. (2005). Dielectric characteristics and reliability tests for thin Au-Ta2O5-SiO2-Si structures. Romanian Journal of Physics, 50: 1009-1017.
Rhoderick, E. H. (1980). Metal-Semiconductor Contacts. In Monograph in Electrical and Electronic Engineering (Hammand, P. and Walsh, D., eds.), p.10. Oxford University Press, New York.
Spassov, D., Atanassova, E., and Virovska, D. (2006). Electrical characteristics of Ta2O5 based capacitors with different gate electrodes. Applied Physics A: Materials Science & Processing, 82: 55-62.
Sze, S. M. (2001). Physics of Semiconductor Devices, John Wiley & Sons, New York.
Swartz, S. L. (1990). Topics in electronic ceramics. IEEE Transactions on Electrical Insulation, 25: 935-987.
Vehkamaki, M., Hanninen, T., Ritala, M., Leskela, M., Sajavaara, T., Rauhala, E., and Keinonen, J. (2001). Atomic layer deposition of SrTiO3 thin films from a novel strontium precursor - strontiumbis(tri-isopropylcyclopentadienyl). Chemical Vapor Deposition, 7: 75-80.
Wilk, G. D., Wallace, R. M., and Anthony, J. M. (2001). High-κ gate dielectrics: Current status and materials properties considerations. Journal of Applied Physics, 89(10): 5243-5276.
Wyon, C. (2002). Future technology for advanced MOS devices. Nuclear Instrumentation and Methods in Physical Research B, 186: 380-391.