Influence of Annealing Temperature on the Properties of ITO Films Prepared by Electron Beam Evaporation and Ion-Assisted Deposition

Authors

  • Artorn Pokaipisit Department of Physics, Faculty of Science, King Mongkut’s University of Technology Thonburi, Bangmod, Bangkok 10140, Thailand.
  • Mati Horprathum Photonics Technology Laboratory, National Electronics and Computer Technology Center, Pathum Thani 12120, Thailand.
  • Pichet Limsuwan Department of Physics, Faculty of Science, King Mongkut’s University of Technology Thonburi, Bangmod, Bangkok 10140, Thailand.

Keywords:

indium tin oxide, annealing temperature, electron beam evaporation

Abstract

Indium tin oxide (ITO) films were deposited on glass substrates by electron beam evaporation and ion-assisted deposition. Evaporation material source was 90 wt% In2O3 and 10 wt% SnO2 (purity of 99.99%). The ITO films were annealed in the air at 200, 250, 300 and 350 °C for 1 h. The structures, electrical and optical properties of ITO films were investigated. The deposited films were analyzed by X-ray diffractometer, four-point probe method and UV-NIR spectrophotometer. It was found that the lowest resistivity (2.25 × 10-4 Ω-cm) and highest optical transmittance (83%) of ITO films were obtained at the annealing temperature of 300 °C. The grain size increased from 36.69 to 46.73 nm with increasing annealing temperature.

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Published

2008-12-31

How to Cite

Artorn Pokaipisit, Mati Horprathum, and Pichet Limsuwan. 2008. “Influence of Annealing Temperature on the Properties of ITO Films Prepared by Electron Beam Evaporation and Ion-Assisted Deposition”. Agriculture and Natural Resources 42 (5). Bangkok, Thailand:362-66. https://li01.tci-thaijo.org/index.php/anres/article/view/244621.

Issue

Vol. 42 No. 5 (2008): January-December

Section

Research Article

License

online 2452-316X print 2468-1458/Copyright © 2022. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/),
production and hosting by Kasetsart University of Research and Development Institute on behalf of Kasetsart University.