Flexible Multilevel Memory Devices Based on Silver Nanoparticles
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Abstract
Multilevel memory devices were achieved using silver nanoparticles (Ag NPs) embedded in poly(9-vinylcarbazole) (PVK) with a structure of ITO/PVK:Ag NPs/Al on plastic substrate. The current-voltage (I-V) curves of the memory devices showed different states of current (OFF-, ON- and INTERM-states). The memory devices exhibited non-volatile rewritable memory characteristics. The optimal Ag NPs concentration was found at 6 wt%. To explore the influence of bending on flexible device performance, the substrates were bended during operation. The number of cycle test showed that the fabricated flexiblemultilevel memory device could retain conductivity in the different states without deterioration.
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References
Meena, J.S., Sze, S.M., Chand, U. and Tseng, T.Y. 2014. Overview of emerging nonvolatile memory technologies. Nanoscale Research Letters, 9, 526.
Lian, K., Li, R., Wang, H., Zhang, J. and Gamota, D. 2010. Printed flexible memory devices using copper phthalocyanine. Materials Science and Engineering B, 167, 12-16.
Ali, S., Bae, J., Choi, K. H., Lee, C. H., Doh, Y. H., Shin, S. and Kobayashi, N. P. 2015. Organic non-volatile memory cell based on resistive elements through electro-hydrodynamic technique. Organic Electronics, 17, 121-128.
Son, J.Y., Shin, Y.H., Kim H. and Jang, H. M. 2010. NiO resistive random access memory nanocapacitor array on graphene, 4(5), 2655-2658.
Dao, T. T., Tran, T. V., Higashimine, K.., Okada, H., Mott, D., Maenosono, S. and Murata, H. 2011. High-performance nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polymethylmethacrylate. Appl. Phys. Lett., 99, 233303.
Li, F., Kim, T. W., Dong, W. and Kim, Y. H. 2009. Nonvolatile memory devices based on ZnO/polyimide nanocomposite sandwiched between two C60 layers. Thin Solid Films, 517, 3916-3918.
Ham, J. H., Oh, D. H., Cho, S. H., Jung, J. H., Kim, T. W., Ryu, E. D. and Kim, S. W. 2009. Carrier transport mechanisms of nonvolatile write-once-read-many-times memory devices with InP–ZnS core-shell nanoparticles embedded in a polymethyl methacrylate layer. Appl. Phys. Lett., 94, 112101.
Prime, D. and Paul, S. 2009. Overview of organic memory devices. Phil. Trans. R. Soc. A, 367, 4141-4157.
Mamo, M. A., Machado, W. S., van Otterlo, W. A. L., Coville, N. J. and Hümmelgen, I. A. 2010. Simple write-once-read-many-times memory device based on a carbon sphere-poly(vinylphenol) composite. Organic Electronics, 11, 1858-1863.
Onlaor, K., Thiwawong , T. and Tunhoo, B. 2018. Multilevel conductance switching and carrier transport mechanisms of memory devices based on an ITO/PVK:Ag nanoparticles/Al structure. Journal of Alloys and Compounds, 732, 880-886.
Onlaor, K., Thiwawong , T. and Tunhoo, B. 2016. Bi-stable switching behaviors of ITO/EVA:ZnO NPs/ITO transparent memory devices fabricated using a thermal roll lamination technique. Organic Electronics, 31, 19-24.
Chung, I., Cho, K., Yun, J. and Kim, S. 2012. Flexible resistive switching memory devices composed of solution-processed GeO2:S films. Microelectronic Engineering, 97, 122-125.
Onlaor, K., Thiwawong , T., Tunhoo, B. and Nukeaw, J. 2013. Electrical properties and switching mechanisms of flexible organic-inorganic bistable devices. Appl Phys A, 112, 495-500.