Electrical Properties of Bi-Layered Nanostructured Au/Indium Tin Oxide Thin Films
Keywords:
electrical resistivity, metallic thin films, bi-layered thin films, four-point probeAbstract
Au thin films were deposited on 150-nm thick indium tin oxide (ITO)/glass using a simple direct current sputtering technique. The Au thickness was varied from approximately 8 nm to 34 nm. Asdeposited bi-layered Au/ITO thin films were then characterized using a four-point probe technique and Hall measurement to identify their electrical properties. The results showed that there was a substantial contribution from the Au films on the electrical conductivity of the bi-layered material, even when a discontinuous Au nanostructure was observed on the ITO films. A simple circuit model was developed to identify the electrical behavior of this bi-layered material. The increase in the carrier concentration and the reduction in carrier mobility was possibly a result of the interfaces between the Au islands and the ITO film.
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online 2452-316X print 2468-1458/Copyright © 2022. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/),
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